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TISP4xx0L3LM Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 ° C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage
‘4070
‘4350
V DRM
± 58
± 275
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/160 (TIA/EIA-IS-968 (formerly FCC Part 68), 10/160 μ s voltage wave shape)
50
5/310 (ITU-T K.21, 10/700 voltage wave shape)
5/320 (TIA/EIA-IS-968 (formerly FCC Part 68), 9/720 μ s voltage wave shape)
10/560 (TIA/EIA-IS-968 (formerly FCC Part 68), 10/560 μ s voltage wave shape)
Non-repetitive peak on-state current (see Notes 2 and 3)
50/60 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
I TSP
I TSM
di T /dt
T J
T stg
40
40
30
4
250
-40 to +150
-65 to +150
A
A
A/ μ s
° C
° C
NOTES: 1. Initially, the TISP4xxxL3LM must be in thermal equilibrium with T J = 25 ° C
2. The surge may be repeated after the TISP4xxxL3LM returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/ ° C for ambient temperatures above 25 ° C.
Electrical Characteristics, TA = 25 ° C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I DRM
V (BO)
Repetitive peak off-
state current
Breakover voltage
V D = V DR M
dv/dt = ± 250 V/ms, R SOURCE = 300 ?
T A = 25 ° C
T A = 85 ° C
‘4070
‘4350
± 5
± 10
± 70
± 350
μ A
V
dv/dt = ± 1000 V/ μ s, Linear voltage ramp,
V (BO)
Breakover voltage
Maximum ramp value = ± 500 V
di/dt = ± 20 A/ μ s, Linear current ramp,
'4070
'4350
± 78
± 359
V
Maximum ramp value = ± 10 A
I (BO)
V T
I H
dv/dt
I D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ± 250 V/ms, R SOURCE = 300 ?
I T = ± 5 A, t W = 100 μ s
I T = ± 5 A, di/dt = - /+ 30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85 V DRM
V D = ± 50 V
f = 100 kHz, V d = 1 V rms, V D = 0,
T A = 85 ° C
‘4070
± 40
± 120
±5
40
± 250
± 3
± 350
±10
50
mA
V
mA
kV/ μ s
μ A
V D = 1 V,
38
48
C off
Off-state capacitance
V D = 5 V
f = 100 kHz, V d = 1 V rms, V D = 0,
‘4350
31
26
39
33
pF
V D = 1 V,
V D = 5 V
24
20
30
25
JULY 2000 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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